IRFF9120
Data Sheet
June 1999
File Number
2287.2
4A, 100V, 0.60 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power
field effect transistor is designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17501.
Features
鈥?4A, 100V
鈥?r
DS(ON)
= 0.60鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power-Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
Ordering Information
PART NUMBER
IRFF9120
NOTE:
PACKAGE
TO-205AF
BRAND
IRFF9120
Symbol
D
When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
SOURCE
GATE
4-94
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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