IRFF310 Datasheet

IC型號：
IRFF310
PDF描述：
1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET
文件大?。?/label>
328.80KB
PDF頁數：
7頁
芯片廠家：
INTERSIL

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上傳產品規(guī)格書

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IRFF310

Data Sheet

March 1999

File Number

1888.3

1.35A, 400V, 3.600 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power 鏗乪ld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speci鏗乪d level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits.

Formerly developmental type TA17444.

Features

鈥?1.35A, 400V

鈥?r

DS(ON)

= 3.600鈩?/div>

鈥?Single Pulse Avalanche Energy Rated

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

IRFF310

PACKAGE

TO-205AF

BRAND

IRFF310

Symbol

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

SOURCE

GATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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