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IRFC43N50KB Datasheet

  • IRFC43N50KB

  • TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | CHIP

  • 16.78KB

  • 1頁

  • ETC

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PD - 94242
IRFC43N50KB
HEXFET
Power MOSFET Die
in Wafer Form
G
S
D
500V
R
DS(on)
=0.090鈩?/div>
6" Wafer
Electrical Characteristics
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Description
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
Guaranteed (Min/Max)
500V Min.
0.090鈩?Max.
3.0V Min., 5.0V Max.
50碌A(chǔ) Max.
鹵 100nA Max.
-55擄C to 150擄C Max.
Test Conditions
V
GS
= 0V, I
D
= 250碌A(chǔ)
V
GS
= 10V, I
D
= 28A
V
DS
= V
GS
, I
D
= 250碌A(chǔ)
V
DS
= 500V, V
GS
= 0V, T
J
= 25擄C
V
GS
= 鹵30V
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Recommended Die Attach Conditions:
Referenced Package Part:
Cr-NiV-Ag ( 0.1碌m-0.2碌m-0.5碌m )
Al with 1% Si (0.004 mm)
0.315" x 0.470" [ 8.00 mm x 11.94 mm ]
150 mm
0.375 mm 鹵 0.025 mm
01-5444
0.004"
0.005" Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 擄C
IRFPS43N50K
NOT ES:
1. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
2. CONTROLLING DIMENS ION: [INCH].
2.08
[.082]
3. LET TER DESIGNATION:
S = S OURCE
G = GAT E
S
Die Outline
1.65
[.065]
S K = S OURCE KELVIN
IS = CURRENT SENS E
E = EMITT ER
4. DIMENS IONAL T OLERANCES :
11.94
[.470]
BONDING PADS :
WIDT H
&
LENGT H
OVERALL DIE:
G
< 0.635 T OLERANCE = + /- 0.013
< [.0250] T OLERANCE = + /- [.0005]
> 0.635 T OLERANCE = + /- 0.025
> [.0250] T OLERANCE = + /- [.0010]
< 1.270 T OLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 T OLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
WIDT H
0.65
[.026]
&
LENGT H
0.49
[.019]
8.00
[.315]
5. DIE T HICKNES S = 0.254 [.010]
* Notes: Electrical characteristics are reported for the reference packaged part (see above) and cannot guaranteed in die sales form due
to variations in packaging materials, dimension.
www.irf.com
1
07/18/01

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