IRFB4410 Datasheet

IC型號：
IRFB4410
PDF描述：
HEXFET Power MOSFET
文件大?。?/label>
409.68KB
PDF頁數(shù)：
11頁
芯片廠家：
IRF

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上傳產(chǎn)品規(guī)格書

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PD - 96902A

IRFB4410

IRFS4410

IRFSL4410

Applications

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Benefits

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

SOA

Enhanced body diode dV/dt and dI/dt Capability

HEXFET

廬

Power MOSFET

DSS

DS(on)

typ.

max.

100V

8.0m

10m

96A

G DS

TO-220AB

IRFB4410

G DS

Pak

IRFS4410

G DS

TO-262

IRFSL4410

Absolute Maximum Ratings

Symbol

@ T

= 25擄C

@ T

= 100擄C

= 25擄C

dv/dt

STG

Parameter

Continuous Drain Current, V

@ 10V

Continuous Drain Current, V

@ 10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Max.

96c

68c

380

250

1.6

鹵 20

-55 to + 175

300

10lbxin (1.1Nxm)

220

See Fig. 14, 15, 16a, 16b

Units

W/擄C

V/ns

擄C

Avalanche Characteristics

AS (Thermally limited)

Thermal Resistance

Symbol

胃JC

胃CS

胃JA

Parameter

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D Pak

Typ.

鈥撯€撯€?/div>

0.50

鈥撯€撯€?/div>

Max.

0.61

鈥撯€撯€?/div>

Units

擄C/W

www.irf.com

11/4/04

標準包裝
50
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
HEXFET®
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標準型
漏極至源極電壓(Vdss)
100V
電流 - 連續(xù)漏極(Id) @ 25° C
96A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
10 毫歐 @ 58A，10V
Id 時的 Vgs(th)（最大）
4V @ 150µA
閘電荷(Qg) @ Vgs
180nC @ 10V
輸入電容 (Ciss) @ Vds
5150pF @ 50V
功率 - 最大
250W
安裝類型
通孔
封裝/外殼
TO-220-3
供應商設備封裝
TO-220AB
包裝
管件
其它名稱
*IRFB4410

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