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IRF9956 Datasheet

  • IRF9956

  • Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

  • 7頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 9.1559A
PRELIMINARY
l
l
l
l
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l
IRF9956
HEXFET
廬
Power MOSFET
8
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
S1
G1
S2
G2
1
D1
D1
D2
D2
2
7
V
DSS
= 30V
3
6
4
5
R
DS(on)
= 0.10鈩?/div>
T o p V iew
Recommended upgrade: IRF7303 or IRF7313
Lower profile/smaller equivalent: IRF7503
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( T
A
= 25擄C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
聟
T
A
= 25擄C
T
A
= 70擄C
V
DS
V
GS
I
D
I
DM
I
S
P
D
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Maximum
30
鹵 20
3.5
2.8
16
1.7
2.0
1.3
44
2.0
0.20
5.0
-55 to + 150
Units
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
T
A
= 25擄C
Maximum Power Dissipation
聟
T
A
= 70擄C
Single Pulse Avalanche Energy
聜
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
聝
Junction and Storage Temperature Range
A
W
mJ
A
mJ
V/ ns
擄C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
聟
Symbol
R
胃JA
Limit
62.5
Units
擄C/W
8/25/97

IRF9956 產(chǎn)品屬性

  • 95

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • HEXFET®

  • 2 個 N 溝道（雙）

  • 邏輯電平門

  • 30V

  • 3.5A

  • 100 毫歐 @ 2.2A，10V

  • 1V @ 250µA

  • 14nC @ 10V

  • 190pF @ 15V

  • 2W

  • 表面貼裝

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

  • 管件

  • *IRF9956

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