Semiconductor
IRF9230, IRF9231,
IRF9232, IRF9233
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,
P-Channel Power MOSFETs
Description
These devices are P-Channel enhancement mode silicon
gate power 鏗乪ld effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
speci鏗乪d level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental type TA17512.
January 1998
Features
鈥?-5.5A and -6.5A, -150V and -200V
鈥?r
DS(ON)
= 0.8鈩?and 1.2鈩?/div>
鈥?Single Pulse Avalanche Energy Rated
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
Ordering Information
D
PART NUMBER
IRF9230
IRF9231
IRF9232
IRF9233
PACKAGE
TO-204AA
TO-204AA
TO-204AA
TO-204AA
BRAND
IRF9230
IRF9231
IRF9232
IRF9233
S
G
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1997
File Number
2226.1
6-1
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