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PD - 96084A

IRF7904UPbF

HEXFET

廬

Power MOSFET

Applications

l

Dual SO-8 MOSFET for POL

Converters in Notebook Computers, Servers,

Graphics Cards, Game Consoles

and Set-Top Box

V

DSS

30V

Q1 16.2m

:

@V

GS

= 10V

Q2 10.8m

:

@V

GS

= 10V

R

DS(on)

max

I

D

7.6A

11A

Benefits

l

Very Low R

DS(on)

at 4.5V V

GS

l

Low Gate Charge

l

Fully Characterized Avalanche Voltage

and Current

l

20V V

GS

Max. Gate Rating

l

Improved Body Diode Reverse Recovery

l

100% Tested for R

G

l

Lead-Free

G1

1

S2

S2

2

3

8

7

6

5

D1

S1 / D2

S1 / D2

S1 / D2

G2

4

SO-8

Absolute Maximum Ratings

Parameter

V

DS

V

GS

I

D

@ T

A

= 25擄C

I

D

@ T

A

= 70擄C

I

DM

P

D

@T

A

= 25擄C

P

D

@T

A

= 70擄C

T

J

T

STG

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

GS

@ 10V

Continuous Drain Current, V

GS

@ 10V

Pulsed Drain Current

Power Dissipation

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

7.6

6.1

61

1.4

0.9

0.011

-55 to + 150

Q1 Max.

30

鹵 20

Q2 Max.

Units

V

11

8.9

89

2.0

1.3

0.016

W/擄C

擄C

W

A

c

Thermal Resistance

R

胃JL

R

胃JA

Parameter

Junction-to-Drain Lead

g

Junction-to-Ambient

fg

Q1 Max.

20

90

Q2 Max.

20

62.5

Units

擄C/W

www.irf.com

1

09/19/06

next

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