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IRF7504 Datasheet

  • IRF7504

  • Power MOSFET(Vdss=-20V, Rds(on)=0.27ohm)

  • 8頁

  • IRF

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PD - 9.1267G
IRF7504
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
S1
G1
S2
G2
1
8
7
D1
D1
D2
D2
2
V
DSS
= -20V
3
6
4
5
R
DS(on)
= 0.27鈩?/div>
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The new Micro8 package, with half the footprint area of the
standard SO-8, provides the smallest footprint available in
an SOIC outline. This makes the Micro8 an ideal device for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro8 will allow
it to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards.
T o p V iew
Micro8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聜
Junction and Storage Temperature Range
Max.
-1.7
-1.4
-9.6
1.25
10
鹵 12
-5.0
-55 to + 150
Units
A
W
mW/擄C
V
V/ns
擄C
Thermal Resistance
Parameter
R
胃JA
Maximum Junction-to-Ambient
聞
Typ.
鈥撯€撯€?/div>
Max.
100
Units
擄C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
8/25/97

IRF7504相關型號PDF文件下載

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