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IRF7106 Datasheet

  • IRF7106

  • Power MOSFET(Vdss=+-20V)

  • 7頁(yè)

  • IRF

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 9.1098B
PRELIMINARY
IRF7106
N-CHANNEL MOSFET
1
8
HEXFET
廬
Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design for which HEXFET Power MOSFETs are well known, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
S1
G1
S2
G2
D1
D1
D2
D2
N-Ch
V
DSS
20V
P-Ch
-20V
2
7
3
6
4
5
R
DS(on)
0.125
鈩?/div>
0.20
鈩?/div>
I
D
3.0A
-2.5A
P-CHANNEL MOSFET
Top View
SO-8
Absolute Maximum Ratings
Parameter
N-Channel
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 70擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
3.0
2.5
10
2.0
0.016
鹵 20
3.0
-55 to + 150
-3.0
Max.
P-Channel
-2.5
-2.0
-10
Units
A
W
W/擄C
V
V/ns
擄C
Thermal Resistance
Parameter
R
胃
JA
Junction-to-Ambient (PCB Mount)**
Min.
鈥撯€撯€撯€?/div>
Typ.
鈥撯€撯€撯€?/div>
Max.
62.5
Units
擄C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Revision 3
69

IRF7106 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • HEXFET?

  • 管件

  • 停產(chǎn)

  • MOSFET（金屬氧化物）

  • N 和 P 溝道

  • -

  • 20V

  • 3A，2.5A

  • 125 毫歐 @ 1A，10V

  • 1V @ 250μA

  • 25nC @ 10V

  • 300pF @ 15V

  • 2W

  • -

  • 表面貼裝型

  • 8-SOIC（0.154"，3.90mm 寬）

  • 8-SO

IRF7106相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD
  • 英文版
    N-Channel Power MOSFETs, 2.25A, 350-400V
    FAIRCHILD ...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD ...
  • 英文版
    N-CHANNEL POWER MOSFETS
    SAMSUNG [S...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF [Inter...
  • 英文版
    3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
    INTERSIL [...
  • 英文版
    TRANSISTORS N-CHANNEL
    IRF
  • 英文版
    N-Channel Power MOSFETs, 3.0 A, 350-400 V
    FAIRCHILD

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