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IRF6662 Datasheet

  • IRF6662

  • DirectFet Power MOSFET Typical values (unless otherwise spe...

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  • IRF

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PD - 97039
IRF6662
DirectFET鈩?Power MOSFET
Typical values (unless otherwise specified)
Lead and Bromide Free
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
V
DSS
Q
g
tot
V
GS
Q
gd
6.8nC
R
DS(on)
V
gs(th)
3.9V
100V max 鹵20V max 17.5m鈩 10V
22nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MZ
DirectFET鈩?ISOMETRIC
Description
The IRF6662 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6662 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
D
@ T
C
= 25擄C
I
DM
E
AS
I
AR
100
Typical RDS(on) (m鈩?
Max.
100
鹵20
8.3
6.6
47
66
39
4.9
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
5
ID= 4.9A
A
mJ
A
80
60
40
20
0
4
6
8
10
T J = 25擄C
12
T J = 125擄C
ID = 4.9A
VDS= 80V
VDS= 50V
VDS= 20V
14
16
10
15
20
25
VGS, Gate -to -Source Voltage (V)
QG Total Gate Charge (nC)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical Total Gate Charge vs.
Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25擄C, L = 3.2mH, R
G
= 25鈩? I
AS
= 4.9A.
www.irf.com
1
08/05/05

IRF6662 產(chǎn)品屬性

  • 24 ns

  • 11 ns

  • 22 nC V @ 10

  • 1360 pF V @ 25

  • 表面貼裝

  • 5.05mm

  • DirectFET MZ

  • 5.45 x 5.05 x 0.6mm

  • 7

  • -40 °C

  • 2800 mW

  • ±20 V

  • 100 V

  • 0.022

  • 8.3 A

  • +150 °C

  • 1

  • 功率 MOSFET

  • 增強(qiáng)

  • N

  • 雙源、四漏極、單

  • 5.45mm

  • 0.6mm

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