IRF6618/IRF6618TR1
V
DSS
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
Low Switching Losses
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount
Techniques
l
PD - 94726D
HEXFET
廬
Power MOSFET
R
DS(on)
max
2.2m鈩V
GS
= 10V
3.4m鈩V
GS
= 4.5V
Qg
43 nC
30V
MT
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
DirectFET聶 ISOMETRIC
SQ
SX
ST
MQ
MX
MT
Description
The IRF6618 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
P
D
@T
C
= 25擄C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Max.
30
鹵20
170
30
24
240
2.8
1.8
89
0.022
-40 to + 150
Units
V
A
g
g
聶
W
W/擄C
擄C
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Avalanche Characteristics
E
AS
I
AR
Thermal Resistance
R
胃
JA
R
胃JA
R
胃JA
R
胃
JC
R
胃J-PCB
脙聶
d
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Max.
210
24
Units
mJ
A
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Parameter
i
fj
g
h
Typ.
鈥撯€撯€?/div>
12.5
20
鈥撯€撯€?/div>
1.0
Max.
45
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.4
鈥撯€撯€?/div>
Units
擄C/W
Junction-to-PCB Mounted
Notes
聛
through
聢
are on page 9
www.irf.com
1
11/3/04
IRF6618 產(chǎn)品屬性
4,800
分離式半導(dǎo)體產(chǎn)品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
邏輯電平門
30V
30A
2.2 毫歐 @ 30A，10V
2.35V @ 250µA
65nC @ 4.5V
5640pF @ 15V
2.8W
表面貼裝
DirectFET? 等容 MT
DIRECTFET? MT
帶卷 (TR)
IRF6618TR
IRF6618相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
ETC
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
-
英文版
Power MOSFET
TRSYS
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD ...
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMICROELECTRON...
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