PD - 95881
IRF6613
l
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Application Specific MOSFETs
Ideal for Synchronous Rectification in Isolated
DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
HEXFET
廬
Power MOSFET
V
DSS
40V
R
DS(on)
max
3.4m鈩V
GS
= 10V
4.1m鈩V
GS
= 4.5V
Qg(typ.)
42nC
MT
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET聶 ISOMETRIC
Description
The IRF6613 combines the latest HEXFET廬 Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6613 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6613 has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613 offers particularly low Rds(on) and high Cdv/dt immunity for synchro-
nous FET applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25擄C
I
D
@ T
A
= 25擄C
I
D
@ T
A
= 70擄C
I
DM
P
D
@T
C
= 25擄C
P
D
@T
A
= 25擄C
P
D
@T
A
= 70擄C
E
AS
I
AR
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
40
鹵20
150
23
18
180
89
2.8
1.8
200
18
0.022
-40 to + 150
Units
V
A
聶
g
g
脙聶
d
f脙
W
mJ
A
W/擄C
擄C
Thermal Resistance
R
胃JA
R
胃JA
R
胃JA
R
胃JC
R
胃J-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
fj
gj
hj
ij
Parameter
Typ.
鈥撯€撯€?/div>
12.5
20
鈥撯€撯€?/div>
1.0
Max.
45
鈥撯€撯€?/div>
鈥撯€撯€?/div>
1.4
鈥撯€撯€?/div>
Units
擄C/W
Notes
聛
through
聢
are on page 2
www.irf.com
1
8/18/04
IRF6613 產(chǎn)品屬性
4,800
分離式半導(dǎo)體產(chǎn)品
FET - 單
HEXFET®
MOSFET N 通道，金屬氧化物
邏輯電平門
40V
23A
3.4 毫歐 @ 23A，10V
2.25V @ 250µA
63nC @ 4.5V
5950pF @ 15V
2.8W
表面貼裝
DirectFET? 等容 MT
DIRECTFET? MT
帶卷 (TR)
IRF6613相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠商
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英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD
-
英文版
N-Channel Power MOSFETs, 3.5A, 150-200V
FAIRCHILD ...
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
-
英文版
2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 1.6A I(D) ...
ETC
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
-
英文版
Power MOSFET
TRSYS
-
英文版
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
INTERSIL [...
-
英文版
N-Channel Power MOSFETs, 7A, 150-200V
FAIRCHILD ...
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
STMICROELECTRON...
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