IRF530/D Datasheet

IC型號(hào)：
IRF530/D
PDF描述：
N-Channel Enhancement-Mode Silicon Gate
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170.19KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
ETC

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by IRF530/D

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TMOS E-FET.

鈩?/div>

Power Field Effect Transistor

N鈥揅hannel Enhancement鈥揗ode Silicon Gate

This advanced TMOS power FET is designed to withstand high

energy in the avalanche and commutation modes. This new energy

efficient design also offers a drain鈥搕o鈥搒ource diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters, and PWM motor

controls. These devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating area

are critical and offer additional safety margin against unexpected

voltage transients.

鈥?/div>

Avalanche Energy Specified

鈥?/div>

Source鈥搕o鈥揇rain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

鈥?/div>

Diode is Characterized for Use in Bridge Circuits

鈥?/div>

IDSS and VDS(on) Specified at Elevated Temperature

IRF530

TMOS POWER FET

14 AMPERES

100 VOLTS

RDS(on) = 0.140

廬

CASE 221A鈥?9

TO-220AB

MAXIMUM RATINGS

(TC = 25擄C unless otherwise noted)

Rating

Drain鈥搕o鈥揝ource Voltage

Drain鈥搕o鈥揋ate Voltage (RGS = 1.0 M鈩?

Gate鈥搕o鈥揝ource Voltage 鈥?Continuous

Gate鈥搕o鈥揝ource Voltage

鈥?Single Pulse (tp

鈮?/div>

Drain Current 鈥?Continuous

Drain Current

鈥?Continuous @ 100擄C

Drain Current

鈥?Single Pulse (tp

鈮?/div>

Total Power Dissipation @ TC = 25擄C

Derate above 25擄C

Operating and Storage Temperature Range

Symbol

VDSS

VDGR

VGS

VGSM

IDM

TJ, Tstg

Value

100

鹵

0.63

鈥?55 to 150

Unit

Vdc

Adc

Apk

Watts

W/擄C

擄C

UNCLAMPED DRAIN鈥揟O鈥揝OURCE AVALANCHE CHARACTERISTICS

(TJ < 150擄C)

Single Pulse Drain鈥搕o鈥揝ource Avalanche Energy 鈥?STARTING TJ = 25擄C

(VDD = 75 V, VGS = 10 V, PEAK IL = 14 A, L = 1.0 mH, RG = 25

)

EAS

THERMAL CHARACTERISTICS

Thermal Resistance 鈥?Junction鈥搕o鈥揅ase擄

Thermal Resistance

鈥?Junction鈥搕o鈥揂mbient擄

Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from case for 10 seconds

E鈥揊ET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

胃JC

胃JA

1.60

62.5

275

擄C/W

擄C

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

REV 1

漏

Motorola TMOS

Motorola, Inc. 1998

Power MOSFET Transistor Device Data

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