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Features
Integrated Gate Drivers
Temperature Monitor
Overcurrent shutdown
Fully Isolated Package
Low VCE (on) Non Punch Through IGBT Technology.
Undervoltage lockout for all channels
Matched propagation delay for all channels
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Lower di/dt gate driver for better noise immunity
Motor Power range 0.75~1.5kW / 85~253 Vac
Isolation 2000V
RMS
min
Absolute Maximum Ratings
Parameter
V
CES
/ V
RRM
V
+
I
O
@ T
C
=25擄C
I
O
@ T
C
=100擄C
I
O
F
PWM
P
d
V
ISO
T
J
(IGBT & Diodes)
T
J
(Driver IC)
T
Description
IGBT/Diode Blocking Voltage
Positive Bus Input Voltage
RMS Phase Current (Note 1)
RMS Phase Current (Note 1)
Pulsed RMS Phase Current (Note 2)
PWM Carrier Frequency
Power dissipation per IGBT @ T
C
=25擄C
Isolation Voltage (1min)
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M3 screw)
+
Max. Value
600
450
20
10
30
20
38
2000
-40 to +150
-40 to +150
0.5 to 0.6
Units
V
A
kHz
W
V
RMS
擄C
Nm
Note 1: Sinusoidal Modulation at V =400V, T
J
=150擄C, F
PWM
=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: t
P
<100ms; T
C
=25擄C; F
PWM
=16kHz.
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