ILH200
HERMETIC PHOTOTRANSISTOR
DUAL CHANNEL OPTOCOUPLER
FEATURES
鈥?Operating Temperature Range, 鈥?5
擄
C to +125
擄
C
鈥?Current Transfer Ratio Guaranteed from
鈥?5
擄
C to +100
擄
C Ambient Temperature Range
鈥?High Current Transfer Ratio at Low Input Current
鈥?Isolation Test Voltage, 3000 VDC
鈥?Two Isolated Channels per Package
鈥?Standard 8 Pin DIP Package
DESCRIPTION
The ILH200 is designed especially for hi-rel applica-
tions requiring optical isolation with high current trans-
fer ratio and low saturation V
CE
. Each channel of the
optocoupler consists of a light emitting diode and a
NPN silicon phototransistor mounted and coupled in
an 8 pin hermetically sealed DIP package. The low
input current makes the ILH200 well suited for direct
CMOS to LSTTL/TTL interfaces.
Dimensions in inches (mm)
.390鹵.005
(9.91鹵.13)
8
7
6
5
.320
(8.13)
max.
4
.150
(3.81)
max.
.300
(7.62)
typ.
Siemens
XXX XXXX
XXYY
.020
(.51)
min.
1
2
3
.010鹵.002
(.25鹵.05)
Anode
1
8
Emitter
.018鹵.002
(.46鹵.05)
.100
鹵.010
(2.54鹵.25)
.125
(3.18)
min.
Cathode
Cathode
2
3
7
Collector
Collector
6
Anode
4
5
Emitter
Maximum Ratings
Emitter (per channel)
Reverse Voltage ................................................................................6.0 V
Forward Current ..............................................................................60 mA
Peak Forward Current
(1)
......................................................................1 A
Power Dissipation...........................................................................75 mW
Derate Linearly from 25
擄
C ......................................................0.75 mW/
擄
C
Detector (per channel)
Collector-Emitter Voltage ...................................................................70 V
Emitter-Collector Voltage .....................................................................7 V
Continuous Collector Current ..........................................................50 mA
Power Dissipation.........................................................................100 mW
Derate Linearly from 25
擄
C ........................................................1.0 mW/
擄
C
Package
Input to Output Isolation Test Voltage
(2 )
...................................3000 VDC
Storage Temperature Range ..........................................鈥?5
擄
C to +150
擄
C
Operating Temperature Range.......................................鈥?5
擄
C to +125
擄
C
Junction Temperature......................................................................150
擄
C
Soldering Time at 240
擄
C, 1.6 mm from case ................................ 10 sec.
Power Dissipation.........................................................................350 mW
Derate Linearly from 25
擄
C ........................................................3.5 mW/
擄
C
Notes:
1. Values applies for P
W
鈮?/div>
1 ms, PRR
鈮?/div>
300 pps.
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. T
A
=25
擄
C and duration=1 second, RH=45%.
5鈥?
1
2
3
4
