IL1, 20% Min.
IL2, 100% Min.
IL5, 50% Min.
鈥?/div>
VDE Approval #0884
(Available with Option 1)
D E
Dimensions in inches (mm)
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
pin one ID
Anode 1
Cathode 2
NC 3
.300 (7.62)
typ.
6
5
4
Base
Collector
Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4擄
typ.
.018 (0.45)
.022 (0.55)
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
18擄
.031 (0.80) min. 3擄鈥?擄
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
typ.
.300鈥?347
(7.62鈥?.81)
.114 (2.90)
.130 (3.0)
DESCRIPTION
The IL1/2/5 are optically coupled isolated pairs
employing GaAs infrared LEDs and silicon NPN
phototransistor. Signal information, including a DC
level, can be transmitted by the drive while main-
taining a high degree of electrical isolation between
input and output. The IL1/2/5 are especially
designed for driving medium-speed logic and can
be used to eliminate troublesome ground loop and
noise problems. These couplers can be used also
to replace relays and transformers in many digital
interface applications such as CRT modulation.
See Appnote 45, 鈥淗ow to Use Optocoupler Normalized
Curves鈥?
Maximum Ratings
Emitter
Reverse Voltage ................................................................................... 6.0 V
Forward Current ................................................................................60 mA
Surge Current.......................................................................................2.5 A
Power Dissipation............................................................................ 100 mW
Derate Linearly from 25
擄
C........................................................ 1.33 mW/
擄
C
Detector
Collector-Emitter Reverse Voltage
IL1 ....................................................................................................... 50 V
IL2, IL5 ................................................................................................ 70 V
Emitter-Base Reverse Voltage.............................................................. 7.0 V
Collector-Base Reverse Voltage............................................................ 70 V
Collector Current ...............................................................................50 mA
Collector Current (t<1.0 ms) ............................................................400 mA
Power Dissipation............................................................................ 200 mW
Derate Linearly from 25
擄
C .......................................................... 2.6 mW/
擄
C
Package
Package Power Dissipation ........................................................... 250 mW
Derate Linearly from 25
擄
C .......................................................... 3.3 mW/
擄
C
Isolation Test Voltage (between emitter and detector
referred to standard climate 23
擄
C/50%RH, DIN 50014) .......... 5300 V
RMS
Creepage ......................................................................................
鈮?/div>
7.0 mm
Clearance......................................................................................
鈮?/div>
7.0 mm
Comparative Tracking Index per
DIN IEC 112/VDE 0303, part 1 ........................................................... 175
Isolation Resistance
V
IO
=500 V,
T
A
=25
擄
C ...................................................................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V,
T
A
=100
擄
C .................................................................
鈮?/div>
10
11
鈩?/div>
Storage Temperature ........................................................ 鈥?0
擄
C to +150
擄
C
Operating Temperature .................................................... 鈥?0
擄
C to +100
擄
C
Junction Temperature......................................................................... 100
擄
C
Soldering Temperature (2.0 mm from case bottom) .......................... 260
擄
C
錚?/div>
2001 In鏗乶eon Technologies Corp. 鈥?Optoelectronics Division 鈥?San Jose, CA
www.in鏗乶eon.com/opto 鈥?1-888-In鏗乶eon (1-888-463-4636)
2鈥?5
March 17. 2000-13
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版本
描述
廠商
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