鈥?/div>
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
2 generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
-
E
off
optimized for
I
C
=1A
nd
IGB01N120H2
C
G
E
鈥?/div>
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D虜-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
鈥?/div>
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
IGP01N120H2
IGB01N120H2
IGD01N120H2
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
T
C
= 25擄C,
f
= 140kHz
T
C
= 100擄C,
f
= 140kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
鈮?/div>
1200V,
T
j
鈮?/div>
150擄C
Gate-emitter voltage
Power dissipation
T
C
= 25擄C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
-
-40...+150
260
225 (for SMD)
擄C
V
GE
P
tot
鹵20
28
V
W
I
Cpuls
-
Symbol
V
CE
I
C
3.2
1.3
3.5
3.5
Value
1200
Unit
V
A
V
CE
1200V
1200V
1200V
I
C
1A
1A
1A
E
off
0.09mJ
0.09mJ
0.09mJ
T
j
150擄C
150擄C
150擄C
Package
P-TO-220-3-1
P-TO-263 (D
2
PAK)
P-TO-252 (DPAK)
Ordering Code
Q67040-S4593
Q67040-S4592
Q67040-S4591
Power Semiconductors
1
Rev. 2, Mar-04
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