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IBM13T8644MPE-360T Datasheet

  • IBM13T8644MPE-360T

  • x64 SDRAM Module

  • 17頁

  • ETC

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Discontinued (4/1/00 last order; 7/31/00 - last ship)
.
Preliminary
Features
鈥?144 Pin JEDEC Standard, 8 Byte Small Outline
Dual-In-line Memory Module
鈥?8Mx64 Synchronous DRAM SO DIMM
鈥?Performance: PC100
CAS Latency
f
CK
Clock Frequency
t
CK
Clock Cycle
t
AC
Clock Access Time
-360
3
100
10
6
Units
MHz
ns
ns
IBM13T8644MPE
8M x 64 PC100 SDRAM SO DIMM
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Inputs and outputs are LVTTL (3.3V) compatible
10 Ohm Resistors on DQ鈥檚
Single 3.3V
鹵
0.3V Power Supply
Single Pulsed RAS interface
SDRAMs have 4 internal banks
Fully Synchronous to positive Clock Edge
Data Mask for Byte Read/Write control
鈥?Programmable Operation:
- CAS Latency: 2, 3
- Burst Type: Sequential or Interleave
- Burst Length: 1, 2, 4, 8, Full-Page (Full-
Page supports Sequential burst only)
- Operation: Burst Read and Write or Multiple
Burst Read with Single Write
鈥?Auto Refresh (CBR) and Self Refresh
鈥?Automatic and controlled Precharge Commands
鈥?Suspend Mode and Power Down Mode
鈥?12/8/2 Addressing (Row/Column/Bank)
鈥?4096 refresh cycles distributed across 64ms
鈥?Serial Presence Detect
鈥?Card size: 2.66" x 1.25" x 0.149"
鈥?Gold contacts
鈥?SDRAM
S
in TSOP Type II Package
Description
IBM13T8644MPE is a 144-pin Synchronous DRAM
Small Outline Dual In-line Memory Module (SO -
DIMM) which is organized as a 8Mx64 high-speed
memory array. The SO DIMM uses eight 4Mx16
SDRAMs in 400mil TSOP II packages. The SO -
DIMM achieves high speed data transfer rates of up
to 100MHz by employing a prefetch/pipeline hybrid
architecture that supports the JEDEC 1N rule while
allowing very low burst power.
The SO DIMM is intended to comply with all JEDEC
and INTEL PC100 rev 1.2 standards set for 144 pin
SDRAM SO DIMMs.
All control, address, and data input/output circuits
are synchronized with the positive edge of the exter-
nally supplied clock inputs.
All inputs are sampled at the positive edge of each
externally supplied clock (CK0, CK1). Internal oper-
ating modes are defined by combinations of the
RAS, CAS, WE, S0, S1, DQMB, and CKE0, CKE1,
signals. A command decoder initiates the necessary
timings for each operation. A 12 bit address bus
accepts address information in a row/column multi-
plexing arrangement.
Prior to any access operation, the CAS latency,
burst type, burst length, and burst operation type
must be programmed into the SO DIMM by address
inputs A0-A9 during the Mode Register Set cycle.
The SO DIMM uses serial presence detects imple-
mented via a serial EEPROM using the two pin IIC
protocol. The first 128 bytes of serial PD data are
used by the DIMM manufacturer. The last 128 bytes
are available to the customer.
All IBM 144-pin SO DIMMs provide a high perfor-
mance, flexible 8-byte interface in a 2.66" long
space-saving footprint.
Card Outline
(Front)
(Back)
1
2
59 61
60 62
143
144
45L7072.E93888B
5/99
漏IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 1 of 17

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