SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 140 Volt V
CEO
* Gain of 250 at I
C
=0.2 Amps and very low V
CE(sat)
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE 聳 FZT694B
PARTMARKING DETAIL 聳 FZT795A
FZT795A
C
E
C
B
VALUE
-140
-140
-5
-1
-500
2
-55 to +150
UNIT
V
V
V
A
mA
W
擄C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j:
T
stg
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C)
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
on
t
off
300
250
100
100
225
15
100
1900
-0.75
800
-140
-140
-5
-0.1
-0.1
-0.3
-0.3
-0.25
-0.95
V
V
V
碌
A
碌
A
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-100V
V
EB
=-4V
I
C
=-100mA, I
B
=-1mA*
I
C
=-200mA, I
B
=-5mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-200mA, V
CE
=-2V*
I
C
=-300mA, V
CE
=-2V*
V
V
V
V
V
MHz
pF
pF
ns
ns
I
C
=-50mA, V
CE
=-5V
f=50MHz
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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