SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 4 聳 FEBRUARY 1997
FEATURES
* 250 Volt V
CEO
* Gain of 500 at I
C
=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL 聳
FZT696B
FZT696B
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
180
180
5
1
0.5
2
-55 to +150
UNIT
V
V
V
A
A
W
擄C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C)
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-OnVoltage
Static Forward Current Transfer
Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
on
t
off
500
150
70
200
6
80
4400
180
180
5
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V
V
V
0.1
0.1
0.2
0.2
0.25
0.9
0.9
碌
A
碌
A
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=140V
V
EB
=4V
I
C
=50mA, I
B
=0.5mA*
I
C
=100mA, I
B
=2mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, I
B
=5mA*
I
C
=200mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=5V*
V
V
V
V
V
MHz
pF
pF
ns
ns
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CE
=10V, f=1MHz
I
C
=100mA, I
B1
=10mA
I
B2
=10mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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