SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTORS
ISSUE 2 聳 FEBRUARY 1995
FEATURES
* 60 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE 聳 FZT751
PARTMARKING DETAIL 聳 FZT651
FZT651
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
SYMBOL MIN.
V
(BR)CBO
80
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
70
100
80
40
140
0.12
0.43
0.9
0.8
200
200
170
80
175
45
800
30
60
5
0.1
10
0.1
0.3
0.6
1.25
1
300
MHz
ns
ns
pF
TYP.
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
碌
A
碌
A
碌
A
VALUE
80
60
5
6
3
2
-55 to +150
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Switching Times
Output Capacitance
V
V
V
V
V
CB
=60V
V
CB
=60V,
T
amb
=100擄C
V
EB
=4V
I
C
=1A, I
B
=100mA*
I
C
=3A, I
B
=300mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=2V*
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=100mA, V
CE
=5V
f=100MHz
I
C
=500mA, V
CC
=10V
I
B1
=I
B2
=50mA
V
CB
=10V, f=1MHz
f
T
t
on
t
off
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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