SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 聳 NOVEMBER 1995
7
C
COMPLEMENTARY TYPE 聳
PARTMARKING DETAIL 聳
FZT593
FZT493
FZT493
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
I
CBO
I
EBO
I
CES
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
100
80
30
150
10
MIN.
120
100
5
100
100
100
0.3
0.6
1.15
1.0
300
MHz
pF
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
120
100
5
2
1
200
2
-55 to +150
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=100V
V
EB
=4V
V
CES
=100V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
= 1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V,
f =100MHz
V
CB
=10V, f=1MHz
UNIT
V
V
V
A
A
mA
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
For typical Characteristics graphs see FMMT493 datasheet
3 - 190
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