SOT 223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - APRIL 1997
FZT1049A
C
FEATURES
*
*
*
*
*
*
V
CEO
= 30V
5 Amp Continuous Current
20 Amp Pulse Current
Low Saturation Voltage
High Gain
Extremely Low Equivalent On-resistance;
R
CE(sat)
= 50m鈩?at 5A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C 鈥?/div>
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
80
30
5
20
5
500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
擄C
鈥?The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
next