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Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FZ 1500 R 25 KF1

H枚chstzul盲ssige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

Kollektor-Dauergleichstrom

DC-collector current

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

Dauergleichstrom

DC forward current

Periodischer Spitzenstrom

repetitive peak forw. current

Grenzlastintegral der Diode

2

I t - value, Diode

Isolations-Pr眉fspannung

insulation test voltage

t

P

= 1 ms

T

C

= 80 擄C

T

C

= 25 擄C

t

P

= 1 ms, T

C

= 80擄C

V

CES

I

C,nom.

I

C

I

CRM

2500

1500

2400

3000

V

A

A

A

T

C

=25擄C, Transistor

P

tot

15,6

kW

V

GES

+/- 20V

V

I

F

1500

A

I

FRM

3000

A

V

R

= 0V, t

p

= 10ms, T

Vj

= 125擄C

I t

2

900

kA s

2

RMS, f = 50 Hz, t = 1 min.

V

ISOL

5

kV

Charakteristische Werte / Characteristic values

Transistor / Transistor

Kollektor-Emitter S盲ttigungsspannung

collector-emitter saturation voltage

Gate-Schwellenspannung

gate threshold voltage

Gateladung

gate charge

Eingangskapazit盲t

input capacitance

R眉ckwirkungskapazit盲t

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

Gate-Emitter Reststrom

gate-emitter leakage current

I

C

= 1500A, V

GE

= 15V, T

vj

= 25擄C

I

C

= 1500A, V

GE

= 15V, T

vj

= 125擄C

I

C

= 120mA, V

CE

= V

GE

, T

vj

= 25擄C

V

GE(th)

V

CE sat

min.

-

-

4,3

typ.

3,0

3,8

5,3

max.

3,5

4,3

6,3

V

V

V

V

GE

= -15V ... +15V

Q

G

-

26

-

碌C

f = 1MHz,T

vj

= 25擄C,V

CE

= 25V, V

GE

= 0V

C

ies

-

140

-

nF

f = 1MHz,T

vj

= 25擄C,V

CE

= 25V, V

GE

= 0V

C

res

-

12

-

nF

V

CE

= 2500V, V

GE

= 0V, T

vj

= 25擄C

I

CES

-

-

30

mA

V

CE

= 0V, V

GE

= 20V, T

vj

= 25擄C

I

GES

-

-

400

nA

prepared by: Oliver Schilling

approved by: Thomas Sch眉tze

date of publication: 01.09.2001

revision: 3

1

FZ151@3.xls

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