Ordering number:EN4893
FX853
MOSFET:N-Channel Silicon MOSFET
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
路 Composite type composed of a low ON-resistance N-
channel MOSFET for ultrahigh-speed switching and
low-voltage driving and a fast-recovery, low forward
-voltage Schottky barrier diode. Facilitates high-
density mounting.
路 The FX853 is formed with 2 chips, one being
equivalent to the 2SK1467 and the other the
SB05-05P, placed in one package.
Package Dimensions
unit:mm
2119
[FX853]
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
SANYO:XP6
(Bottom view)
Electrical Connection
1:Gate
2:Source
3:No connection
4:Anode
5:Cathode
6:Drain
(Top view)
Specifications
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Absolute Maximum Ratings
at Ta = 25藲C
Symbol
VDSS
VGSS
ID
IDP
PD
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
PW
鈮?/div>
10碌s, duty cycle
鈮?/div>
1%
Tc=25藲C
Mounted on ceramic board (750mm
2
脳0.8mm)
Conditions
Ratings
30
鹵15
2
8
6
1.5
150
鈥?5 to +150
50
55
500
5
鈥?5 to +125
鈥?5 to +150
Unit
V
V
A
A
W
W
藲C
藲C
V
V
mA
A
藲C
藲C
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
路 Marking:853
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095TS (KOTO) TA-0118 No.4893-1/4
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