Ordering number:EN5052
FX802
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode (Twin type 路 Cathode Common)
DC-DC Converter
Features
路 Complex type of a low saturation voltage, high
speed switching and large current PNP transistor and
a fast recovery and low forward voltage Schottky
barrier diode facilitating high-sensity mounting.
路 The FX802 is composed of 2 chips, one being
equivalent to the 2SB1302 and the other the
SB20W03P, placed in one packae.
Package Dimensions
unit:mm
2126
[FX802]
Electrical Connection
1:Base
2:Emitter
3:Anode1
4:Anode2
5:Cathode
6:Collector
(Top view)
1:Base
2:Emitter
3:Anode1
4:Anode2
5:Cathode
6:Collector
SANYO:XP6
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IO
IFSM
Tj
Tstg
(Total)
50Hz sine wave, 1 cycle
30
35
2
4
10
鈥?5 to +125
鈥?5 to +125
V
V
A
A
A
藲C
藲C
VCBO
VCEO
VEBO
IC
I CP
IB
PC
Tj
Mounted on ceramic board
(750mm
2
脳0.8mm)
1 unit
鈥?5
鈥?0
鈥?
鈥?
鈥?
鈥?
1.5
150
V
V
V
A
A
A
W
藲C
Symbol
Conditions
Ratings
Unit
路 Marking:802
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/41095TS (KOTO) TA-0134 No.5052-1/4
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