FSYE33A0D, FSYE33A0R
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
The Discrete Products Operation of Fairchild has developed
a series of Radiation Hardened MOSFETs speci鏗乧ally
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100 krads of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacri鏗乧ed.
The Fairchild portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
鏗乪ld-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Reliability screening is available as either commercial, TXV
equivalent of MIL-PRF-19500, or Space equivalent of
MIL-PRF-19500. Contact Fairchild for any desired deviations
from the data sheet.
Formerly available as type TA17699W.
Features
鈥?5A, 400V, r
DS(ON)
= 1.2
鈩?/div>
鈥?Total Dose
- Meets Pre-RAD Speci鏗乧ations to 100 krad(Si)
鈥?Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 80% of Rated Breakdown and
V
GS
of 10V Off-Bias
鈥?Dose Rate
- Typically Survives 3E9 rad (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 6nA Per-rad(Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci鏗乧ations
for 3E12 Neutrons/cm
2
- Usable to 3E13 Neutrons/cm
2
Symbol
D
G
S
Packaging
SMD.5
Ordering Information
RAD LEVEL
10K
100K
100K
SCREENING LEVEL
Commercial
TXV
Space
PART NUMBER/BRAND
FSYE33A0D1
FSYE33A0R3
FSYE33A0R4
漏2001 Fairchild Semiconductor Corporation
FSYE33A0D, FSYE33A0R Rev. B
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