FQS4410
May 2000
QFET
FQS4410
Single N-Channel, Logic Level, Power MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters, high efficiency switching for power
management in portable and battery operated products.
TM
Features
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10A, 30V, R
DS(on)
= 0.0135鈩?@V
GS
= 10 V
Low gate charge ( typical 21 nC)
Low Crss ( typical 145 pF)
Fast switching
Improved dv/dt capability
175擄C maximum junction temperature rating
8
7
6
5
4
3
2
1
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
dv/dt
P
D
T
J
, T
STG
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 70擄C)
Drain Current
- Pulsed
(Note 1)
FQS4410
30
10
8
50
鹵
20
7.0
2.5
0.02
-55 to +175
Units
V
A
A
A
V
V/ns
W
W/擄C
擄C
Gate-Source Voltage
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
Linear Derating Factor
Operating and Storage Temperature Range
(Note 3)
Thermal Characteristics
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction-to-Ambient
Typ
--
Max
50
Units
擄C/W
漏2000 Fairchild Semiconductor International
Rev. A, May 2000
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