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FQPF6N40CF Datasheet

  • FQPF6N40CF

  • 400V N-Channel MOSFET

  • 10頁(yè)

  • FAIRCHILD

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FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
February 2006
FRFET
FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
Features
鈥?6A, 400V, R
DS(on)
= 1.1
鈩?/div>
@V
GS
= 10 V
鈥?Low gate charge ( typical 16nC)
鈥?Low Crss ( typical 15pF)
鈥?Fast switching
鈥?100% avalanche tested
鈥?Improved dv/dt capability
鈥?Fast recovery body diode (typical 70ns)
TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, electronic lamp
ballasts based on half bridge topology.
D
G
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain Current
Drain Current
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
- Continuous (T
C
= 100擄C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQP6N40CF
6
3.6
24
FQPF6N40CF
400
6*
3.6*
24*
鹵
30
270
6
73
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
73
0.58
-55 to +150
300
38
0.3
W
W/擄C
擄C
擄C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FQP6N40CF
1.71
0.5
62.5
FQPF6N40CF
3.31
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FQP6N40CF/FQPF6N40CF Rev. B

FQPF6N40CF 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 400V

  • 6A

  • 1 歐姆 @ 3A，10V

  • 4V @ 250µA

  • 20nC @ 10V

  • 625pF @ 25V

  • 38W

  • 通孔

  • TO-220-3 整包

  • TO-220F

  • 管件

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