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FQP30N06 Datasheet

  • FQP30N06

  • 60V N-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQP30N06
QFET
FQP30N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
TM
Features
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30A, 60V, R
DS(on)
= 0.04鈩?@V
GS
= 10 V
Low gate charge ( typical 19 nC)
Low Crss ( typical 40 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175擄C maximum junction temperature rating
D
!
"
G
!
G DS
! "
"
"
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP30N06
60
30
21.3
120
鹵
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
280
30
7.9
7.0
79
0.53
-55 to +175
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
1.90
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2003 Fairchild Semiconductor Corporation
Rev. A2, March 2003

FQP30N06 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • QFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 60V

  • 30A

  • 40 毫歐 @ 15A，10V

  • 4V @ 250µA

  • 25nC @ 10V

  • 945pF @ 25V

  • 79W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

  • FQP30N06-NDFQP30N06FS

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