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FQP1P50 Datasheet

  • FQP1P50

  • 500V P-Channel MOSFET

  • 8頁

  • FAIRCHILD

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FQP1P50
June 2000
QFET
FQP1P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complementary
half bridge.
TM
Features
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-1.5A, -500V, R
DS(on)
= 10.5鈩?@V
GS
= -10 V
Low gate charge ( typical 11 nC)
Low Crss ( typical 6.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
S
!
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G
!
G
DS
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TO-220
FQP Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQP1P50
-500
-1.5
-0.95
-6.0
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
110
-1.5
6.3
-4.5
63
0.51
-55 to +150
300
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
胃JC
R
胃CS
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Typ
--
0.5
--
Max
1.98
--
62.5
Units
擄C/W
擄C/W
擄C/W
漏2000 Fairchild Semiconductor International
Rev. A, June 2000

FQP1P50 產品屬性

  • 1,000

  • 分離式半導體產品

  • FET - 單

  • QFET™

  • MOSFET P 通道，金屬氧化物

  • 標準型

  • 500V

  • 1.5A

  • 10.5 歐姆 @ 750mA，10V

  • 5V @ 250µA

  • 14nC @ 10V

  • 350pF @ 25V

  • 63W

  • 通孔

  • TO-220-3

  • TO-220

  • 管件

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