鈥?/div>
Advanced New Design
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 5.0nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 9.3鈩?(Typ.)
1
2
3
R
DS(ON)
= 11.5鈩?/div>
I
D
= 1.2A
TO-220
1. Gate 2. Drain 3. Source
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristics
Drain-to-Source Voltage
Continuous Drain Current (T
C
= 25擄C)
Continuous Drain Current (T
C
= 100擄C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
= 25擄C)
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8鈥?from case for 5-seconds
y
x
x
z
x
Value
600
1.2
0.76
4.8
鹵30
50
1.2
4.0
4.5
40
0.32
鈭?5
to +150
擄C
300
A
V
mJ
A
mJ
V/ns
W
W/擄C
Units
V
A
THERMAL RESISTANCE
Symbol
R
胃JC
R
胃CS
R
胃JA
Characteristics
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
鈭?/div>
0.5
鈭?/div>
Max.
3.13
鈭?/div>
62.5
擄C/W
Units
REV. B
1
漏
1999 Fairchild Semiconductor Corporation
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