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FQI6N60C Datasheet

  • FQI6N60C

  • 600V N-Channel MOSFET

  • 9頁

  • FAIRCHILD

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FQB6N60C / FQI6N60C
QFET
FQB6N60C / FQI6N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
廬
Features
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5.5A, 600V, R
DS(on)
= 2.0鈩?@V
GS
= 10 V
Low gate charge ( typical 16 nC)
Low Crss ( typical 7 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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G
S
D
2
-PAK
FQB Series
I
2
-PAK
G D S
FQI Series
G
!
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQB6N60C / FQI6N60C
600
5.5
3.3
22
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/擄C
擄C
擄C
5.5 *
3.3 *
22 *
300
5.5
12.5
4.5
125
1.0
-55 to +150
300
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ
-
-
-
Max
1.0
40
62.5
Units
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2004 Fairchild Semiconductor Corporation
Rev. A, March 2004

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