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FQB32N12V2 Datasheet

  • FQB32N12V2

  • 120V N-Channel MOSFET

  • 9頁

  • FAIRCHILD

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FQB32N12V2/FQI32N12V2
QFET
FQB32N12V2/FQI32N12V2
120V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild鈥檚 proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
廬
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
32A, 120V, R
DS(on)
= 0.05鈩?@V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 70 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
"
G
S
D
2
-PAK
FQB Series
I
2
-PAK
G D S
FQI Series
G
!
! "
"
"
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25擄C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25擄C)
Drain Current
- Continuous (T
C
= 100擄C)
Drain Current
- Pulsed
(Note 1)
FQB32N12V2/FQI32N12V2
120
32
23
128
鹵
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/擄C
擄C
擄C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25擄C) *
Power Dissipation (T
C
= 25擄C)
- Derate above 25擄C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
439
32
15
4.5
3.75
150
1
-55 to +175
300
T
J
, T
STG
T
L
Thermal Characteristics
Symbol
R
胃JC
R
胃JA
R
胃JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.0
40
62.5
Units
擄C/W
擄C/W
擄C/W
* When mounted on the minimum pad size recommended (PCB Mount)
漏2003 Fairchild Semiconductor Corporation
Rev. A, December 2003

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