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FPD200_1 Datasheet

  • FPD200_1

  • GENERAL PURPOSE PHEMT DIE

  • 4頁(yè)

  • FILTRONIC

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FPD200
G
ENERAL
P
URPOSE P
HEMT D
IE
F
EATURES
:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
19 dBm Output Power (P1dB)
13 dB Power Gain at 12 GHz
17 dB Maximum Stable Gain at 12 GHz
12 dB Maximum Stable Gain at 18 GHz
45% Power-Added Efficiency
Datasheet v3.0
L
AYOUT
:
G
ENERAL
D
ESCRIPTION
:
The
FPD200
is
an
AlGaAs/InGaAs
pseudomorphic
High
Electron
Mobility
Transistor (pHEMT), featuring a 0.25
碌m
by
200
碌m
Schottky barrier gate, defined by high-
resolution stepper-based photolithography.
The recessed gate structure minimizes
parasitics to optimize performance.
The
epitaxial structure and processing have been
optimized
for
reliable
medium-power
applications.
T
YPICAL
A
PPLICATIONS
:
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Narrowband and broadband high-
performance amplifiers
SATCOM uplink transmitters
PCS/Cellular low-voltage high-efficiency
output amplifiers
Medium-haul digital radio transmitters
E
LECTRICAL
S
PECIFICATIONS
1
:
P
ARAMETER
Power at 1dB Gain Compression
Power Gain at P1dB
Noise Figure
Power-Added Efficiency
Maximum Stable Gain (S21/S12)
f
= 12 GHz
f
= 24 GHz
S
YMBOL
P1dB
G1dB
N.F.min
PAE
MSG
C
ONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5V; IDS = 50% IDSS; POUT = P1dB
M
IN
18
11.0
T
YP
19
13.0
1.2
45
M
AX
U
NITS
dBm
dB
dB
%
VDS = 5 V; IDS = 50% IDSS
16
10.5
17
12
dB
dB
Saturated Drain-Source Current
Maximum Drain-Source Current
IDSS
IMAX
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS
鈮?/div>
+1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.2 mA
IGS = 0.2 mA
IGD = 0.2 mA
VDS > 3V
45
60
120
75
mA
mA
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity
1
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
80
1
0.7
12.0
14.5
1.0
14.0
16.0
280
10
1.3
mS
碌A(chǔ)
V
V
V
擄C/W
胃
JC
Note: T
Ambient
= 22擄C; RF specifications measured at
f
= 12 GHz using CW signal on a sample basis
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website:
www.filtronic.com

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