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FPD2000AS Datasheet

  • FPD2000AS

  • 2W PACKAGED POWER PHEMT

  • 281.92KB

  • 7頁

  • FILTRONIC

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PRELIMINARY
鈥?/div>
PERFORMANCE (1.8 GHz)
鈾?/div>
33 dBm Output Power (P
1dB
)
鈾?/div>
14 dB Power Gain (G
1dB
)
鈾?/div>
46 dBm Output IP3
鈾?/div>
10V Operation
鈾?/div>
50% Power-Added Efficiency
鈾?/div>
Evaluation Boards Available
鈾?/div>
Design Data Available on Website
鈾?/div>
Usable Gain to 4GHz
DESCRIPTION AND APPLICATIONS
FPD2000AS
2W P
ACKAGED
P
OWER P
HEMT
鈥?/div>
SEE PACKAGE OUTLINE FOR
MARKING CODE
The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount
package has been optimized for low parasitics.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter
amplifiers, as well as other power applications in WLL/WLAN amplifiers.
鈥?/div>
ELECTRICAL SPECIFICATIONS AT 22擄C
Parameter
Power at 1dB Gain Compression
Power Gain at dB Gain Compression
Maximum Stable Gain
S
21
/S
12
Power-Added Efficiency
at 1dB Gain Compression
3
rd
-Order Intermodulation Distortion
IP3
PAE
Symbol
P
1dB
G
1dB
MSG
Test Conditions
V
DS
= 10V; I
DS
= 350 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 350 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 10 V; I
DS
= 350 mA
P
IN
= 0dBm, 50鈩?system
V
DS
= 10V; I
DS
= 350 mA
螕
S
and
螕
L
tuned for Optimum IP3
V
DS
= 10V; I
DS
= 350 mA
螕
S
and
螕
L
tuned for Optimum IP3
P
OUT
= 22 dBm (single-tone level)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (channel-to-case)
Phone:
+1 408 850-5790
Fax:
+1 408 850-5766
Min
32
12.5
Typ
33
14.0
20
45
Max
Units
dBm
RF SPECIFICATIONS MEASURED AT
f
= 1.8 GHz USING CW SIGNAL
dB
%
-47
-44
dBc
I
DSS
I
MAX
G
M
I
GSO
|V
P
|
|V
BDGS
|
|V
BDGD
|
螛
CC
V
DS
= 1.3 V; V
GS
= 0 V
V
DS
= 1.3 V; V
GS
鈮?/div>
+1 V
V
DS
= 1.3 V; V
GS
= 0 V
V
GS
= -3 V
V
DS
= 1.3 V; I
DS
= 4 mA
I
GS
= 4 mA
I
GD
= 4 mA
See Note on following page
975
1150
1800
1200
35
1325
mA
mA
mS
85
1.4
碌A(chǔ)
V
V
V
擄C/W
0.7
14
20
0.9
16
22
20
http://
www.filcs.com
Revised:
05/03/04
Email:
sales@filcsi.com

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