鈥?/div>
DESCRIPTION AND APPLICATIONS
The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility
transistor (pHEMT) intended for applications requiring low noise figure, medium output power
and/or high dynamic range. It utilizes a 0.25
碌m
x 750
碌m
Schottky barrier gate, defined by
electron-beam photolithography. The FP750鈥檚 active areas are passivated with Si
3
N
4
, and the
SOT343 (also known as SC-70) package is ideal for low-cost, high-performance applications that
require a surface-mount package.
The FP750SOT343 is designed for commercial systems for use in low noise amplifiers and
oscillators operating over the RF and Microwave frequency ranges. The low noise figure makes it
appropriate for use in receivers in WLL/RLL, WLAN, and GPS. This device is also suitable for
PCS and GSM base station front-ends.
鈥?/div>
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25擄C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Noise Figure
Symbol
I
DSS
P-1dB
G-1dB
PAE
NF
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
f=2GHz; V
DS
= 3.3 V; I
DS
= 110mA
f=2GHz; V
DS
= 3.3 V; I
DS
= 110mA
f=2GHz; V
DS
= 3.3 V;
I
DS
= 110mA; P
OUT
= 21 dBm
f=2GHz; V
DS
= 3.3V; 40mA
f=2GHz; V
DS
= 3.3V; I
DS
= 60mA
f=2GHz; V
DS
= 3.3V; 110mA
V
DS
= 3.3V; I
DS
= 110mA
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 2 mA
I
GS
= 2 mA
I
GD
= 2 mA
Min
180
20
16
Typ
220
21
17
45
0.4
0.5
0.7
33
220
5
-1.2
12
13
Max
265
Units
mA
dBm
dB
%
dB
dB
dB
dBm
mS
碌A(chǔ)
V
V
V
Output Third-Order Intercept Point
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
IP3
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
170
35
10
10
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
2/01/02
Email:
sales@filss.com
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