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Technische Information / Technical Information

IGBT-Module

IGBT-Modules

FP35R12KS4C G

Elektrische Eigenschaften / Electrical properties

H枚chstzul盲ssige Werte / Maximum rated values

Diode Gleichrichter/ Diode Rectifier

Periodische R眉ckw. Spitzensperrspannung

repetitive peak reverse voltage

Durchla脽strom Grenzeffektivwert

RMS forward current per chip

Dauergleichstrom

DC forward current

Sto脽strom Grenzwert

surge forward current

Grenzlastintegral

I t - value

2

V

RRM

I

FRMSM

T

C

= 80擄C

t

P

= 10 ms, T

vj

=

t

P

= 10 ms, T

vj

=

25擄C

25擄C

I

d

I

FSM

It

2

1600

40

35

315

260

500

340

V

A

A

A

A

As

As

2

2

t

P

= 10 ms, T

vj

= 150擄C

t

P

= 10 ms, T

vj

= 150擄C

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

Kollektor-Dauergleichstrom

DC-collector current

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

Diode Wechselrichter/ Diode Inverter

Dauergleichstrom

DC forward current

Periodischer Spitzenstrom

repetitive peak forw. current

Grenzlastintegral

I

2

t - value

Tc = 55 擄C

t

P

= 1 ms

V

R

= 0V, t

p

= 10ms, T

vj

= 125擄C

I

F

I

FRM

I

2

t

35

70

310

A

A

A

2

s

Tc = 55 擄C

T

C

= 25 擄C

t

P

= 1 ms,

T

C

= 25擄C

T

C

=

55 擄C

V

CES

I

C,nom.

I

C

I

CRM

P

tot

V

GES

1200

35

40

70

230

+/- 20V

V

A

A

A

W

V

Transistor Brems-Chopper/ Transistor Brake-Chopper

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

Kollektor-Dauergleichstrom

DC-collector current

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

Gesamt-Verlustleistung

total power dissipation

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

Diode Brems-Chopper/ Diode Brake-Chopper

Dauergleichstrom

DC forward current

Periodischer Spitzenstrom

repetitive peak forw. current

prepared by: A.Schulz

approved by: M.Hierholzer

Tc = 55 擄C

t

P

= 1 ms

I

F

I

FRM

10

20

A

A

T

C

= 80 擄C

T

C

= 25 擄C

t

P

= 1 ms, T

C

= 80擄C

T

C

= 25擄C

V

CES

I

C,nom.

I

C

I

CRM

P

tot

V

GES

1200

17,5

35

35

180

+/- 20V

V

A

A

A

W

V

date of publication: 2001-11-28

revision: 2

1/11

DB-PIM-S_IGBT_V2.xls

2001-11-28

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