SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 聳 JANUARY 1996
FEATURES
*
Gain of 50 at I
C
=100mA
FMMTA55 - 2H
FMMTA56 - 2G
FMMTA55R - NB
FMMTA56R - MB
7
FMMTA55
FMMTA56
C
B
E
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
-60
-60
-80
-80
-4
-500
330
-55 to +150
SOT23
FMMTA55 FMMTA56
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
FMMTA55
PARAMETER
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector-Base
Cut-Off Current
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO
50
50
-0.25
-1.2
100
100
MIN.
-60
-4
-0.1
FMMTA56
MAX. UNIT
V
V
-0.1
-0.1
50
50
-0.25
-1.2
V
V
MHz
碌
A
碌
A
MAX. MIN.
-80
-4
CONDITIONS.
I
C
=-1mA, I
B
=0*
I
E
=-100
碌
A, I
C
=0
V
CE
=-60V
V
CB
=-80V, I
E
=0
V
CB
=-60V, I
E
=0
I
C
=-10mA, V
CE
=1V*
I
C
=-100mA, V
CE
=1V*
I
C
=-100mA,
I
B
=-10mA*
I
C
=-100mA, V
CE
=-1V*
I
C
=-10mA, V
CE
=-2V
f=100MHz
-0.1
Static Forward
h
FE
Current Transfer Ratio
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Transition
Frequency
V
CE(sat)
V
BE(on)
f
T
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
