SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 3 聳 FEBRUARY 1996
PARTMARKING DETAIL 聳
COMPLIMENTARY TYPE 聳
FMMTA70 聳 2CZ
FMMTA20
FMMTA70
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
-40
-4
-100
330
-55 to +150
SOT23
UNIT
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Emitter
Breakdown Voltage
Base-Emitter
Breakdown Voltage
Collector Base Cut-Off
Current
Static Forward
Current Transfer
Ratio
Collector-Emitter
Saturation Voltage
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
40
MIN.
-40
-4
-100
400
MAX.
UNIT
V
V
nA
CONDITIONS.
I
C
=-1mA, I
B
=0
I
E
=-100
碌
A, I
C
=0
V
CB
=-30V, I
E
=0
I
C
=-5mA, V
CE
=-10V*
V
CE(sat)
f
T
C
obo
125
-0.25
V
MHz
I
C
=-10mA, I
B
=-1mA*
I
C
=-5mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, I
E
=0, f=100KHz
4
pF
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
PAGE NUMBER
1
