SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 - NOVEMBER 1995
FEATURES
* 350 Volt V
CEO
* Gain of 15 at I
C
=-100mA
7
FMMT6520
E
C
B
APPLICATIONS
* SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS
COMPLEMENTARY TYPE FMMT6517
PARTMARKING DETAIL 聳 520
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
= 25擄C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
I
CBO
I
EBO
V
CE(sat)
MIN.
-350
-350
-5
-50
-50
-0.3
-0.35
-0.5
-1.0
-0.75
-0.85
-0.90
-2.0
20
30
30
20
15
50
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
nA
nA
V
V
V
V
V
V
V
V
VALUE
-350
-350
-5
-500
330
-55 to +150
CONDITIONS.
I
C
=-100
碌
A, I
E
=0
I
C
=-1mA, I
B
=0*
I
E
=-10
碌
A, I
C
=0
V
CB
=-250V, I
E
=0
V
EB
=-3V, I
C
=0
I
C
=-10mA, I
B
=-1mA*
I
C
=-20mA, I
B
=-2mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-50mA, I
B
=-5mA*
I
C
=-10mA, I
B
=-1mA*
I
C
=-20mA, I
B
=-2mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-100mA, V
CE
=-10V*
I
C
=-1mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V*
I
C
=-30mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
pF
MHz
V
CB
=20V, f=1MHz
I
C
=-10mA, V
CE
=-20V,
f=20MHz
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
V
BE(sat)
V
BE(on)
h
FE
200
200
6
Output Capacitance
Transition Frequency
C
obo
f
T
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
