SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JULY 1995
PARTMARKING DETAILS:
FMMT5209 - 2Q
FMMT5210 - 2R
7
FMMT5209
FMMT5210
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
FMMT5210
MAX.
50
50
700
850
200
250
250
30
600
3
4
Output Capacitance
C
obo
4
250
900
2
3
4
MHz
MHz
dB
dB
pF
600
FMMT5209
50
50
4.5
50
330
-55 TO +150
SOT23
FMMT5210
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Cut-Off Current
Emitter-Base
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter ON
Voltage
Static Forward
Current Transfer
Ratio
SYMBOL
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
100
150
150
30
150
FMMT5209
MIN.
50
50
700
850
300
MAX. MIN.
UNIT CONDITIONS.
nA
nA
mV
mV
V
CB
=35V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=1mA, V
CE
=5V
I
C
=100
碌
A, V
CE
=5V
I
C
=1mA, V
CE
=5V
I
C
=10mA, V
CE
=5V*
I
C
=0.5mA, V
CE
=5V,
f=20MHz
I
C
=1mA, V
CE
=5V, f=1KHz
I
C
=200
碌
A, V
CE
=5V, R
g
=2K
鈩?/div>
,
f=30Hz to 15KHz at -3dB
points
I
C
=200
碌
A, V
CE
=5V, R
g
=2K
鈩?/div>
,
f=1KHz to
鈭?/div>
f=200Hz
V
CB
=5V, I
E
=0, f=140KHz
Transition Frequency f
T
Small Signal Current h
fe
Transfer Ratio
Noise Figure
N
1
