SOT23 SILICON PLANAR HIGH SPEED
SWITCHING DIODE
ISSUE 2 - OCTOBER 1995
FMMD6050
2
DIODE PIN CONNECTION
PARTMARKING DETAIL 聳 5A
1
3
!
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Breakdown Voltage Voltage (I
R
=100
碌
A)
Peak Forward Current
Peak Forward Surge Current
Power Dissipation at T
amb
= 25擄C
Operating and Storage Temperature Range
SYMBOL
V
(BR)
I
F
I
FM
P
tot
T
j
:T
stg
MAX.
VALUE
70
200
500
330
-55 to +150
UNIT
V
mA
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Breakdown Voltage
Forward Voltage
Reverse Current
Recovery Time*
Diode Capacitance
SYMBOL
V
(BR)
V
F
I
R
t
rr
C
d
MIN.
70
0.5
0.8
0.7
1.1
0.1
5
2.5
UNIT CONDITIONS.
V
V
V
碌
A
I
R
=10
碌
A
I
F
=1mA
I
F
=100mA
V
R
=50V
I
F
= I
R
=10mA,
I
R(REC)
=1 mA
V
R
=0, f=1MHz
ns
pF
*For switching test circuit diagram see FMMD7000 datasheet
PAGE NUMBER
1
