Impedance Matched Zin/Zout = 50鈩?/div>
0.25碌m PHEMT Technology
DESCRIPTION
The FMM5811GJ-1 is a high-gain, wide band 3-stage MMIC
amplifier designed for operation in the 17.7-23.6GHz
frequency range. This amplifier has an input and output
matching designed for use in a 50鈩?systems.This device is
well suited for point-to-point radio applications.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25擄C)
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Storage Temperature
Operating Backside Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
Condition
Rating
10
-7
16
-55 to +125
-40 to +85
Unit
V
V
dBm
擄C
擄C
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 6 volts.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25擄C)
Item
Frequency Range
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Gain Flatness
Power-Added Efficiency
Drain Current
Gate Current
Input Return Loss
Output Return Loss
Symbol
f
P
1dB
G
1dB
鈭咷
畏
add
Iddrf
Iggrf
RLin
RLout
VDD = 6V
VGG = -5V
f = 17.7 - 23.6 GHz
ZS = ZL = 50鈩?/div>
Conditions
Limits
Min. Typ. Max.
17.7 - 23.6
23.0
12
-
-
-
-
-
-
24.5
15
2.0
20
250
-7.5
-7.0
-5.0
-
20
-
-
400
-15.0
-
-
Unit
GHz
dBm
dB
dB
%
mA
mA
dB
dB
G.C.P.: Gain Compression Point
Edition 1.1
July 2001
1
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