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FMB3906 Datasheet

  • FMB3906

  • PNP Multi-Chip General Purpose Amplifier

  • 6頁(yè)

  • FAIRCHILD

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FFB3906 / FMB3906 / MMPQ3906
FFB3906
E2
B2
C1
FMB3906
C2
E1
C1
E1
MMPQ3906
E2
B2
E3
B3
E4
B4
B1
SC70-6
Mark: .2A
pin #1
C2
B1
E1
pin #1
B1
B2
E2
C2
C1
C3
C2
C4
C4
C3
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SuperSOT
錚?/div>
-6
Mark: .2A
SOIC-16
Mark: MMPQ3906
pin #1
C1
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents of 10
碌A(chǔ)
to 100 mA. Sourced
from Process 66.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25擄C unless otherwise noted
Parameter
Value
40
40
5.0
200
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
T
A
= 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB3904
300
2.4
415
Max
FMB3904
700
5.6
180
MMPQ3904
1,000
8.0
125
240
Units
mW
mW/擄C
擄C/W
擄C/W
擄C/W
錚?/div>
1998 Fairchild Semiconductor Corporation

FMB3906 產(chǎn)品屬性

  • 3,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 陣列

  • -

  • 2 PNP（雙）

  • 200mA

  • 40V

  • 400mV @ 5mA，50mA

  • -

  • 100 @ 10mA，1V

  • 700mW

  • 200MHz

  • 表面貼裝

  • SOT-23-6 細(xì)型，TSOT-23-6

  • 6-SSOT

  • 帶卷 (TR)

  • FMB3906-NDFMB3906TR

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