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FLLD261

HIGH CONDUCTANCE LOW LEAKAGE DIODE

P

D

. . . .350 mW @ T

A

= 25 Deg C

B

V

. . . .200 V (M

IN

) @ I

R

= 5 uA

ABSOLUTE MAXIMUM RATINGS

(NOTE 1)

TEMPERATURES

Storage Temperature

Operating Junction Temperature

-55 to +150 Degrees C

PACKAGE

TO-236AB (Low)

3

P8A

1

2

CONNECTION DIAGRAMS

3

POWER DISSIPATION

(NOTES 2 & 3)

Total Device Dissipation at TA = 25 Deg C

Derating Factor per Degree C

350 mW

2.8 mW

1

2

VOLTAGES & CURRENTS

WIV

Working Inverse Voltage

IO

Average Rectified Current

IF

DC Forward Current

if

Recurrent Peak Forward Current

if (surge) Peak Forward Surge Current

Pulse width = 1 second

Pulse width = 1 microsec

100 V

250 mA

600 mA

700 mA

1.0 A

3.0 A

ELECTRICAL CHARACTERISTICS

(25 Degrees C Ambient Temperature unless otherwise stated)

SYM

B

V

I

R

V

F

C

T

RR

T

FR

V

FM

CHARACTERISTICS

Breakdown Voltage

Reverse Voltage Leakage Current

Forward Voltage

Diode Capacitance

Reverse Recovery Time

Forward Recovery Time

Peak Forward Voltage

MIN

200

MAX

UNITS

V

TEST CONDITIONS

I

R

=

5.0 uA

T

A

= 150 Deg C

5.0

1.40

4.0

400

10

0.9

Typ

nA

uA

V

pF

ns

V

R

= 100 V

V

R

= 100 V

I

F

=

V

R

=

200 mA

1.0 V

f = 1.0 MH

Z

I

F

= I

R

= 50 to 400 mA

I

RR

= 10% I

R

L

= 100 ohms

I

F

=

10 mA

I

F

=

10 mA

Rise Time = 5 ns +/-20%

NOTES:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

標(biāo)準(zhǔn)包裝
1
類別
分離式半導(dǎo)體產(chǎn)品
家庭
二極管，整流器 - 陣列
系列
-
電壓 - 在 If 時(shí)為正向 (Vf)（最大）
1.4V @ 200mA
電流 - 在 Vr 時(shí)反向漏電
5nA @ 100V
電流 - 平均整流 (Io)（每個(gè)二極管）
250mA
電壓 - (Vr)（最大）
100V
反向恢復(fù)時(shí)間(trr)
400ns
二極管類型
標(biāo)準(zhǔn)
速度
快速恢復(fù) = 200mA（Io）
二極管配置
1 對(duì)串聯(lián)
安裝類型
表面貼裝
封裝/外殼
TO-236-3，SC-59，SOT-23-3
供應(yīng)商設(shè)備封裝
SOT-23-3
包裝
Digi-Reel®
其它名稱
FLLD261FSDKR

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