FLL410IK-4C
L-Band High Power GaAs FET
FEATURES
銉籋igh
Output Power: Pout=46.0dBm(Typ.)
銉籋igh
Gain: GL=11.5dB(Typ.)
銉籋igh
PAE:
畏add=44%(Typ.)
銉籅road
Band: 3.4~3.7GHz
銉籋ermetically
Sealed Package
DESCRIPTION
The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
designed for use in 3.4 鈥?3.7 GHz band amplifiers. This new product
is uniquely suited for use in WLL applications as it offers excellent
linearity, high efficiency, high gain, long term reliability and ease of use.
Fujitsu鈥檚 stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
PT
T
stg
T
ch
Rating
15
-5
107.0
-65 to +175
175
o
Unit
V
V
W
C
C
o
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25
o
C)
Item
DC Input Voltage
Gate Current
Gate Current
Operating Channel Temperature
Symbol
V
DS
I
GF
I
GR
Tch
R
G
=5
鈩?/div>
R
G
=5
鈩?/div>
Condition
Limit
鈮?2
鈮?17
鈮?23
鈮?45
Unit
V
mA
mA
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Drain Current
Pinch-off Voltage
Gate-Source Breakdown Voltage
Symbol
I
DSS
V
p
V
GSO
P
OUT
G
L
I
dsr
畏
add
R
th
Test Conditions
V
DS
=5V , V
GS
=0V
V
DS
=5V , I
DS
=100mA
I
GS
=-1.0mA
V
DS
=12V
f=3.6 GHz
I
DS
=3A
Pin=36.0dBm
Channel to Case
Min.
-
-0.1
-5.0
45.0
10.5
-
-
-
Limit
Typ.
4.0
-0.3
-
46.0
11.5
6.7
44
1.0
Max.
-
-0.5
-
-
-
8.7
-
1.4
Unit
A
V
V
dBm
dB
A
%
o
Output Power
Linear Gain *
1
Power-added Efficiency
Thermal Resistance
C/W
*錛戯細GL is measured at Pin=22.0dBm
ESD
Class
鈪?/div>
2000V銆€~
CASE STYLE: IK
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
鈩?/div>
)
Edition 1.1
Oct 2003
1
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