銉?/div>
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC317MG-4 is a power GaAs FET that is designed for
general purpose application in the C-Band frequency range as it
provides superior power,gain,and efficiency.
EUD stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
o
C)
Item
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
DS
V
GS
PTot
T
stg
T
ch
15
-5
15
-65 to +175
175
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
Condition
Limit
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Operating channel temperature
VDS
IGF
IGR
Tch
RG=100
鈩?/div>
RG=100
鈩?/div>
10
<19.4
>-2.0
145
Unit
V
mA
mA
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Limit
Item
Symbol
Condition
Min. Typ. Max.
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Unit
mA
mS
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
ESD
Class
III
IDSS
gm
Vp
VGSO
P1dB
G1dB
畏add
Rth
VDS=5V,VGS=0V
VDS=5V,IDS=800mA
VDS=5V,IDS=60mA
IGS=-60uA
V
DS
=10V
f=4.2GHz
IDS(DC)=0.6IDSS(Typ)
Channel to Case
-
-
-1.0
-5.0
33.5
8.5
-
-
1200
600
-2.0
-
34.8
9.5
37.0
8.0
1800
-
-3.5
-
-
-
-
10.0
V
V
dBm
dB
%
o
C/W
2000 V~
CASE STYLE: MG
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k鈩?
Edition 1.1
May 2005
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