FJZ733
FJZ733
Low Frequency Amplifier
鈥?Collector-Base Voltage : V
CBO
= -60V
鈥?Complement to FJZ945
3
2
1
SOT-623F
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-60
-50
-5
-150
100
150
-55 ~ 150
Units
V
V
V
mA
mW
擄C
擄C
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
= -100碌A(chǔ), I
E
=0
I
C
= -10mA. I
B
=0
I
E
= -10碌A(chǔ). I
C
=0
V
CB
= --60V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -1mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -6V, I
C
= -1mA
V
CE
= -6V, I
C
= -10mA
V
CB
= -10V, I
E
= 0, f=1MHz
V
CE
= -6V, I
C
= -0.3mA
f=1MHz, Rs=10k鈩?/div>
-0.50
50
40
-0.18
-0.62
180
2.8
6.0
Min.
-60
-50
-5
-100
-100
700
-0.3
-0.80
V
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
nA
nA
Thermal Characteristics
T
C
=25擄C unless otherwise noted
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction to Ambient
Max.
1250
Units
擄C/W
h
FE
Classification & Marking
Classification
h
FE
Marking
R
40 ~ 80
A2
O
70 ~ 140
A3
Marking
Y
120 ~ 240
A1
G
200 ~ 400
A4
L
350 ~ 700
A5
A1
漏2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
1
2
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