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FJP5554 High Voltage Fast Switching Transistor

FJP5554

High Voltage Fast Switching Transistor

Features

鈥?Fast Speed Switching

鈥?Wide Safe Operating Area

鈥?Suitable for Electronic Ballast Application

1

1.Base

TO-220

2.Collector

3.Emitter

Absolute Maximum Ratings

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

J

T

STG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

* Collector Current (Pulse)

Collector Dissipation (T

C

= 25擄C)

Junction Temperature

Storage Temperature

Value

1050

400

15

4

8

70

150

-55 ~ 150

Units

V

V

V

A

A

W

擄C

擄C

* Pulse Test: PW = 300碌s, Duty Cycle = 2% Pulsed

Package Marking and Ordering Information

Device Marking

J5554

J5554

Device

FJP5554TU

FJP5554

Package

TO-220

TO-220

Reel Size

-

-

Tape Width

-

-

Quantity

50

200

漏2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FJP5554 Rev. A

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